![]() ![]() The voltage applied at the gate terminal usually is directly related to the current between the source and drain terminals.MOSFETs and BJTs (bipolar junction transistors) are considered as different semiconductors as BJT is a current-controlled device while the MOSFET is a voltage-controlled device.It is made by the controlled oxidation of a silicon semiconductor material. It is also known as IGFET Insulated Gate Field Effect Transistor. The MOSFET stands for Metal Oxide Silicon Field Effect Transistor.It is important to note that conduction is a process that is carried out inside MOSFET by the movements of both electrons and holes but electrons are major carriers in the n-channel MOSFET devices while holes are major carriers in the p-channel MOSFET devices.This is an N-channel MOSFET, here the conduction process is exercised by the flow of electrons in contrast to the P-channel MOSFET where the conduction process is carried out by the flow of holes.The external circuits are connected with these MOSFETs through these terminals. This IRF840 MOSFET is a three-terminal device made of gate (G) drain (D) and source (S) terminals.It is a fast switching and high voltage device that requires 10V across the gate terminal to initiate the conduction process. The IRF840 is an n-channel power MOSFET that supports loads up to 8A and 500V.I suggest you read this entire post till the end as I’ll discuss the complete Introduction to IRF840 covering datasheet, pinout, features, equivalent, and applications. In other words, though conduction is carried out by both the movement of holes and electrons, electrons are major carriers in this case. As this is an n-channel MOSFET here conduction process is exercised by the movements of the electrons. It is a fast switching and high voltage device that is available with low on-state resistance. In this post today, I’ll walk you through the Introduction to IRF840. ![]()
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